Product Summary
The RC28F256P30B85 Intel StrataFlash Embedded Memory (P30) product is the latest generation of Intel StrataFlash memory devices. Offered in 64-Mbit up through 1-Gbit densities, the RC28F256P30B85 brings reliable, two-bit-per-cell storage technology to the embedded flash market segment. Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR device, and support for code and data storage. Features of RC28F256P30B85 include high-performance synchronousburst read mode, fast asynchronous access times, low power, flexible security options, and three industry standard package choices.
Parametrics
RC28F256P30B85 absolute maximum ratings: (1)Temperature under bias: –40 ℃ to +85 ℃; (2)Storage temperature: –65 ℃ to +125 ℃; (3)Voltage on any signal (except VCC, VPP): –0.5 V to +4.1 V; (4)VPP voltage: –0.2 V to +10 V; (5)VCC voltage: –0.2 V to +2.5 V; (6)VCCQ voltage: –0.2 V to +4.1 V; (7)Output short circuit current: 100 mA.
Features
RC28F256P30B85 features: (1)High performance: 85/88 ns initial access, 40 MHz with zero wait states, 20 ns clock-todata output synchronous-burst read mode, 25 ns asynchronous-page read mode, 4-, 8-, 16-, and continuous-word burst mode, Buffered Enhanced Factory Programming (BEFP) at 5 μs/byte (Typ), 1.8 V buffered programming at 7 μs/byte (Typ); (2)Architecture: Multi-Level Cell Technology: Highest Density; (3)at Lowest Cost, Asymmetrically-blocked architecture, Four 32-KByte parameter blocks: top or bottom configuration, 128-KByte main blocks; (4)Voltage and Power: VCC (core) voltage: 1.7 V – 2.0 V, VCCQ (I/O) voltage: 1.7 V – 3.6 V, Standby current: 55 μA (Typ) for 256-Mbit, 4-Word synchronous read current: 13 mA (Typ) at 40 MHz.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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RC28F256P30B85A |
IC FLASH 256MBIT 85NS 64EZBGA |
Data Sheet |
Negotiable |
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RC28F256P30B85D |
IC FLASH 256MBIT 85NS 64EZBGA |
Data Sheet |
Negotiable |
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